(l c/ 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 MJ10042 mj10045 mj10048 25 kva energy management series switchmode darlington transistors 25, 60 and 100 ampere operating current these darlington transistors are designed for industrial service under practical operating environments found in switching high power inductive loads off 120, 230 and 460 volt lines. emitter collector 'emitter-collector diode is a high power diode. maximum ratings mechanical ratings rating mounting torque (to heat sink with 6-32 screw) (note 1) lead torque (lead to bus with s mm screw) (mole 2) per unit weight value 8.0 20 ? 41 unit in.-lb in, ib grams thermal characteristics thermal resistance, junction to case. 0.6 "c/vv mica insulators available as separate items, 0.003- thick. motorola pert number 14csb12387boo3. notes: 1. a belleville washer of 0.281' o.o., o.i 38' i.d., 0.013" thick and 43 pounds flat is recommended. 2. the maximum penetration of the screw should be limited to 0.60^ 3. to adapt the collector and emitter terminals to quick connect terminals, amp 2bo series faston tab p/n 61499-1 it suggested. 4. the mounting holes of this package are compatible with to-2o4 (formerly to-3) mounting holes. 25, go, and 100 ampere npn silicon power darlington transistor 260,4bo and 850 volts 260 watts designer's data for "worst-gate" conditions the designer's data sheet permits the design of mostciroults enlirelyf rom the information presented. umlt dots? representing device characteristics boundaries?are given to facilitate "worst'case" design. sivltl: pin i. base 2. emitter 3. collector 4. collector notes: 1. dimensions a and b are datum! and t is both a datum surface and seating plane. 1. positional tolerance for mounting holf.s; i4100m looioi @|t|a 3. dimensioning a?citolt 3. dimensioning a ansi yli.5,19!!. 4. controlling dimension: inch except for metrically threaded inserts. millimeters itj inches .ho. jib. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
MJ10042, mj10045, mj10048 maximum ratings (continued) (tc - 26c unless otherwise noted.) riling collector. emitter volume (ib = 0) collector-emitter voltage (rbe- 10 ohms) collector-base voltage emitter-base voltage collector current ? operating (tc - 1 1 5c) (tc = ss'c) (tc = 66c) collector current ? continuous ? peak repetitive ? peak nonrepelitive base current ? continuous ? peak nonrepethlve total device dissipation derate above tc = 26c for 1 -minute overload operating junction and storage temperature range for 1 -minute overload symbol vceo vcer vcb veb 'clop) ic ib pd tj. tstg MJ10042 850 900 900 25 37.6 76 126 mj1004e 460 500 500 mj10048 250 300 300 8.0 60 75 160 26o 100' 100 300 600 25 eo 250 2.0 , 333 -66(0*150 -sb to 200 unit vdc vdc vdc vdc a a a watts w/?c watts c electrical characteristics (tc * 2sc unless otherwise noted) characteristic symbol unit off characteristics collector-emitter sustaining voltage (1] (lc = 1 25 m adc) MJ10042 mj1o045 mj1o048 collector cutoff current (vce = rated vcb. vbe(off) = < 5 vdc) (vce = bated vcb. vbe(off) = ' -5 vdc, tc * 1 50c) collector cutoff current (vce ? rated vcer. rbe = 10 n, tc - 100c) emitter cutod current (veb = 4.0 vac, 'c*0) vceo(sus) icev 'cer ie bo 650 4so 260 - ? ? - 2.0 10 10 3so vdc ma ma ma safe operating area second breakdown collector current with base forward-biased clamped inductive soa with base reverse-biased overload safe operating area fbsoa re so a olsoa see figures 32, 34 & 36 see figures 33. 35 & 37 see figures 38, 39, 40. 41 , 42 & 43 dynamic characteristics output capacitance (vcb = 10 vdc. ie = 0. f,ast - 1 .0 khz) cob ? 2000 pf (1) pulse teftt. puls* width of 300 pfl, duty eycla 2.0%. * this rating fs with a 50% duty cycle, and is limited by power dissipation. higher operating currents are allowable it tower duty cycl?.
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